WestminsterResearch

Silicon gap-loaded microstrip slit-tetragonal resonator under IR-irradiation

Zouganelis, Georgios and Budimir, Djuradj (2007) Silicon gap-loaded microstrip slit-tetragonal resonator under IR-irradiation. Microwave & Optical Technology Letters, 49 (3). pp. 699-702. ISSN 0895-2477

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Official URL: http://dx.doi.org/10.1002/mop.22240

Abstract

A microstrip slit-tetragonal resonator gap-loaded with a piece of silicon is proposed as optical tuning element. Change of photoconductivity of silicon, after irradiation of it with an infrared lamp, results a significant change of density (25 dB) of the first resonant peak (n = 1/2) of resonator. This behavior makes this device a possible candidate for optical tuning of microwave transmission lines at specific operating frequency. Measured S-parameters of the proposed device are in good agreement with simulated ones found from finite difference time domain method. Calculation of S-parameters based on a transmission line model is included for comparison.

Item Type:Article
Additional Information:Online ISSN 1098-2760
Research Community:University of Westminster > Electronics and Computer Science, School of
ID Code:3309
Deposited On:15 Feb 2007
Last Modified:16 Oct 2009 09:44

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