Zouganelis, Georgios and Budimir, Djuradj (2007) Silicon gap-loaded microstrip slit-tetragonal resonator under IR-irradiation. Microwave & Optical Technology Letters, 49 (3). pp. 699-702. ISSN 0895-2477Full text not available from this repository.
A microstrip slit-tetragonal resonator gap-loaded with a piece of silicon is proposed as optical tuning element. Change of photoconductivity of silicon, after irradiation of it with an infrared lamp, results a significant change of density (25 dB) of the first resonant peak (n = 1/2) of resonator. This behavior makes this device a possible candidate for optical tuning of microwave transmission lines at specific operating frequency. Measured S-parameters of the proposed device are in good agreement with simulated ones found from finite difference time domain method. Calculation of S-parameters based on a transmission line model is included for comparison.
|Additional Information:||Online ISSN 1098-2760|
|Subjects:||University of Westminster > Science and Technology > Electronics and Computer Science, School of (No longer in use)|
|Depositing User:||Miss Nina Watts|
|Date Deposited:||15 Feb 2007|
|Last Modified:||16 Oct 2009 08:44|
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