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LDMOS RF power amplifiers with improved performance characteristics using defected ground structure

Koulouzis, Helias and Budimir, Djuradj (2006) LDMOS RF power amplifiers with improved performance characteristics using defected ground structure. Microwave & Optical Technology Letters, 48 (1). pp. 50-53. ISSN 0895-2477

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Official URL: http://dx.doi.org/10.1002/mop.21257

Abstract

An LDMOS RF power amplifier with improved performance characteristics such as intermodulation distortion (IMD) and power-added efficiency (PAE) using a defected ground structure (DGS) matching circuit and bias lines is presented. The injection of the fundamental-signal 2nd harmonics in the amplifier together with the two fundamental signals will produce additional IM products at the output. By proper selection of phase and amplitude of the injected second harmonic signals, it is possible to improve the IMD performance. The resultant PAE of power amplifier with DGS matching circuit and bias lines is improved by up to 6%.

Item Type:Article
Additional Information:Online ISSN 1098-2760
Research Community:University of Westminster > Electronics and Computer Science, School of
ID Code:3311
Deposited On:15 Feb 2007
Last Modified:16 Oct 2009 09:58

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